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  ? semiconductor components industries, llc, 2006 july, 2006 ? rev. 2 1 publication order number: MC3346/d MC3346 general purpose transistor array one differentially connected pair and three isolated transistor arrays the MC3346 is designed for general purpose, low power applications for consumer and industrial designs. ? guaranteed base ? emitter voltage matching ? operating current range specified: 10 a to 10 ma ? five general purpose transistors in one package maximum ratings rating symbol value unit collector ? emitter voltage v ceo 15 vdc collector ? base voltage v cbo 20 vdc emitter ? base voltage v eb 5.0 vdc collector ? substrate voltage v cio 20 vdc collector current ? continuous i c 50 madc total power dissipation @ t a = 25 c derate above 25 c p d 1.2 10 w mw/ c operating temperature range t a ? 40 to +85 c storage temperature range t stg ? 65 to +150 c pin connections pin 13 is connected to substrate and must remain at the lowest circuit potential. 1 4 13 12 11 10 9 8 7 6 5 4 3 2 1 q5 q4 q1 q2 q3 http://onsemi.com semiconductor technical data general purpose transistor array d suffix plastic package case 751a (so ? 14) p suffix plastic package case 646 14 1 14 1 device operating temperature range package ordering information MC3346d mc3356p t a = ? 40 to +85 c so ? 14 plastic dip
MC3346 http://onsemi.com 2 electrical characteristics (t a = +25 c, unless otherwise noted.) characteristics symbol min typ max unit static characteristics collector ? base breakdown voltage (i c = 10 adc) v (br)cbo 20 60 ? vdc collector ? emitter breakdown voltage (i c = 1.0 madc) v (br)ceo 15 ? ? vdc collector ? substrate breakdown voltage (i c = 10 a) v (br)cio 20 60 ? vdc emitter ? base breakdown voltage (i e = 10 adc) v (br)ebo 5.0 7.0 ? vdc collector ? base cutoff current (v cb = 10 vdc, i e = 0) i cbo ? ? 40 nadc dc current gain (i c = 10 madc, v ce = 3.0 vdc) (i c = 1.0 madc, v ce = 3.0 vdc) (i c = 10 adc, v ce = 3.0 vdc) h fe ? 40 ? 140 130 60 ? ? ? ? base ? emitter voltage (v ce = 3.0 vdc, i e = 1.0 madc) (v ce = 3.0 vdc, i e = 10 madc) v be ? ? 0.72 0.8 ? ? vdc input offset current for matched pair q1 and q2 (v ce = 3.0 vdc, i c = 1.0 madc) |i io1 ? i io2| ? 0.3 2.0 adc magnitude of input offset voltage (v ce = 3.0 vdc, i c = 1.0 madc) ? ? 0.5 5.0 mvdc temperature coefficient of base ? emitter voltage (v ce = 3.0 vdc, i c = 1.0 madc) v be t d ? ? 1.9 ? mv/ c temperature coefficient ? v io ? t d ? 1.0 ? v/ c collector ? emitter cutoff current (v ce = 10 vdc, i b = 0) i ceo ? ? 0.5 adc dynamic characteristics low frequency noise figure (v ce = 3.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 3.25 ? db forward current transfer ratio (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 khz) h fe ? 110 ? ? short circuit input impedance (v ce = 3.0 vdc, i c = 1.0 madc) h ie ? 3.5 ? k open circuit output impedance (v ce = 3.0 vdc, i c = 1.0 madc) h oe ? 15.6 ? mhos reverse voltage transfer ratio (v ce = 3.0 vdc, i c = 1.0 madc) h re ? 1.8 ? x10 ? 4 forward transfer admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y fe ? 31 ? j1.5 ? ? input admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y ie ? 0.3 + j0.04 ? ? output admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y oe ? 0.001 + j0.03 ? ? current ? gain ? bandwidth product (v ce = 3.0 vdc, i c = 3.0 madc) f t 300 550 ? mhz emitter ? base capacitance (v eb = 3.0 vdc, i e = 0) c eb ? 0.6 ? pf collector ? base capacitance (v cb = 3.0 vdc, i c = 0) c cb ? 0.58 ? pf collector ? substrate capacitance (v cs = 3.0 vdc, i c = 0) c ci ? 2.8 ? pf
MC3346 http://onsemi.com 3 figure 1. collector cutoff current versus temperature (each transistor) figure 2. collector cutoff current versus temperature (each transistor) figure 3. input offset characteristics for q1 and q2 figure 4. base ? emitter and input offset voltage characteristics figure 5. dc current gain t a , ambient temperature ( c) ib = 0 v ce = 10 v v ce = 5.0 v 0 25 50 75 100 125 i , collector cutoff current (nadc) cbd t a , ambient temperature ( c) v cb = 15 v v cb = 5.0 v v cb = 10 v 0 25 50 75 100 125 i , collector cutoff current (nadc) cbd i e , emitter current (madc) h fe fe h , dc current gain h /h , dc current gain ratio fe1 fe2 0.01 0.05 0.1 0.5 1.0 5.0 10 h fe1 h fe2 or h fe2 h fe1 i c , collector current (madc) i , input offset current ( adc) io 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0 i e , emitter current (madc) v , base-emitter voltage (v) fe v be v io 0.01 0.05 0.1 0.5 1.0 5.0 10 v , input offset voltage (mvdc) i o 10 2 10 1 1.0 10 ?1 10 ?2 10 ?3 10 3 10 2 10 1 1.0 10 ?1 10 ?2 140 130 110 90 70 50 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.9 0.8 0.7 0.6 0.5 0.4 3.5 3.0 2.5 2.0 1.5 1.0 0.95 0.9 0.85 0.8 0.75 5.0 4.0 3.0 2.0 1.0 0
MC3346 http://onsemi.com 4 package dimensions p suffix plastic package case 646 ? 06 issue m 17 14 8 b a dim min max min max millimeters inches a 0.715 0.770 18.16 18.80 b 0.240 0.260 6.10 6.60 c 0.145 0.185 3.69 4.69 d 0.015 0.021 0.38 0.53 f 0.040 0.070 1.02 1.78 g 0.100 bsc 2.54 bsc h 0.052 0.095 1.32 2.41 j 0.008 0.015 0.20 0.38 k 0.115 0.135 2.92 3.43 l m ??? 10 ??? 10 n 0.015 0.039 0.38 1.01  notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of leads when formed parallel. 4. dimension b does not include mold flash. 5. rounded corners optional. f hg d k c seating plane n ? t ? 14 pl m 0.13 (0.005) l m j 0.290 0.310 7.37 7.87
MC3346 http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. ? a ? ? b ? g p 7 pl 14 8 7 1 m 0.25 (0.010) b m s b m 0.25 (0.010) a s t ? t ? f r x 45 seating plane d 14 pl k c j m  dim min max min max inches millimeters a 8.55 8.75 0.337 0.344 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27 bsc 0.050 bsc j 0.19 0.25 0.008 0.009 k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.228 0.244 r 0.25 0.50 0.010 0.019  d suffix plastic package case 751a ? 03 (so ? 8) issue f on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MC3346/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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